GaAlN/GaN HEMT heterostructures grown on ‘SiCopSiC' composite substrates for HEMT application
GaAlN/GaN HEMT heterostructures grown on ‘SiCopSiC' composite substrates for HEMT application
In this paper, we report on an innovative solution based on "composite substrates". The GaAlN/GaN HEMT structures are grown on SiCopSiC composite substrates made of thin single crystal SiC “seed layer” transferred on top of a thick polycrystalline SiC, following the "Smart Cut" technology developed by SOITEC. Thanks to the physical properties of the high quality single crystal SiC combined with the high thermal conductivity of the inexpensive polycrystalline SiC, the SiCopSiC composite substrates are expected to significantly improve the cost of the GaAlN/GaN HEMT structures grown on it, while keeping similar device performances compared to GaAlN/GaN structures grown on bulk SiC substrates.
Gallium Nitride; HEMT; Composite Substrate; smart-cut
Gallium Nitride; HEMT; Composite Substrate; smart-cut
selected citations These citations are derived from selected sources.This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).0 popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.Average influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).Average impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.Average
Citations provided by BIP!Popularity provided by BIP!