
doi: 10.1007/bf03002982
Ce papier presente un etat actuel des performances de puissance et de bruit des transistors a effet de champ a gaz ďelectrons bidimensionnel (hemt). On donne au travers de quelques lois simples, la dependance des caracteristiques electriques de ces composants avec la structure de couche (materiaux employes, epaisseursi) et la geometric Enfin on compare les performances en frequences de coupure, puissance et bruit de differentes structures de hemts (p-hemt, lm-hemt, mm-hemt).
| selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | 4 | |
| popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network. | Average | |
| influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | Average | |
| impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network. | Average |
