Quasi-neutral Limit of a Nonlinear Drift Diffusion Model for Semiconductors
Copyright policy )Quasi-neutral Limit of a Nonlinear Drift Diffusion Model for Semiconductors
The authors study the quasi-neutral limit rigorously for a nonlinear drift diffusion model for semiconductors, when the doping profile is a constant or does not change sign, generalizing the previous results of nonlinear adiabatic diffusion. Here they employ multiplier techniques instead of the invariant region method, which allows them to obtain lower and upper bounds on the densities.
- University of Vienna Austria
- Academy of Mathematics and System Sciences, Beijing China (People's Republic of)
- Universität Hamburg Germany
- Academy of Mathematics and Systems Science China (People's Republic of)
- Chinese Academy of Sciences China (People's Republic of)
nonlinear drift-diffusion equations, entropy method, 1010 Mathematics, Statistical mechanics of semiconductors, 1010 Mathematik, quasi-neutral limit, Applied Mathematics, semiconductors, multiplier techniques, Quasi-neutral limit, nonlinear drift diffusion model, PDEs in connection with optics and electromagnetic theory, Analysis
nonlinear drift-diffusion equations, entropy method, 1010 Mathematics, Statistical mechanics of semiconductors, 1010 Mathematik, quasi-neutral limit, Applied Mathematics, semiconductors, multiplier techniques, Quasi-neutral limit, nonlinear drift diffusion model, PDEs in connection with optics and electromagnetic theory, Analysis
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