Atomic-Monolayer MoS2Band-to-Band Tunneling Field-Effect Transistor
Copyright policy ) Lan, Yann Wen; Torres, Carlos M.; Tsai, Shin Hung; Zhu, Xiaodan; Shi, Yumeng; Li, Ming-yang; Li, Lain-Jong; +2 Authors
Lan, Yann Wen; Torres, Carlos M.; Tsai, Shin Hung; Zhu, Xiaodan; Shi, Yumeng; Li, Ming-yang; Li, Lain-Jong; Yeh, Wen Kuan; Wang, Kang L.;
Atomic-Monolayer MoS2Band-to-Band Tunneling Field-Effect Transistor
The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2 , results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.
Saudi Arabia
- King Abdullah University of Science and Technology Saudi Arabia
- University of California, Los Angeles United States
- Academia Sinica Taiwan
- National Applied Research Laboratories Taiwan
- National University of Kaohsiung Taiwan
Band-to-band tunneling, Tunneling field effect transistors, 2D materials, MoS2, Transition metal dichalcogenides
Band-to-band tunneling, Tunneling field effect transistors, 2D materials, MoS2, Transition metal dichalcogenides
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These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
Citations provided by BIP!popularityPopularity provided by BIP!
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
Popularity provided by BIP! 46
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