2D materials exhibit promising properties for key European industrial areas including high-speed computing and communication technologies. However, mainly focused on crystalline materials, these applications are currently limited by the lack of direct and reproducible low cost-synthesis methods, due to high temperature growth. Recently, structurally disordered 2D materials, produced at much lower temperatures, have been shown to manifest a large degree of uniformity over large areas, and performant properties for device applications. Amorphous boron nitride (aBN) is found to exhibit ultra-low dielectric-constant, and excellent field emission performance, being suitable for interconnects technologies and high performance electronics, such as flexible dielectric devices or conductive bridging RAM. MINERVA aims to grow aBN thin films over large area on various substrates, and evaluate their properties as coatings for thermal, electronic and spintronic applications. Particular attention will be paid to achieve nanoscale control of the amorphicity, thickness of the films as well as doping rate and substrate interaction. The relationship between processing and atomic structure will be studied by an appropriate combination of analytical techniques. Modelling to understand the structures and properties of the materials will support and validate the experiments at every stage. The expected physical properties of such deposited layers, coupled with the versatility and adaptability in materials processing, as well as the large-area and uniform coverage at low temperature, should allow their integration as electronic components in ultimate nanoelectronic systems. More concretely, the added value of large scale aBN will be studied for resistive switching devices, magnetic tunnel junctions and spin injection tunnel barriers. The possible dependence of aBN electronic properties in contact to ferromagnetic electrodes will be explored in detail, predicting the possible fruitful potential of spin manipulation by proximity effect at the hybridized aBN/ferromagnet interface. This is expected to generate new scientific knowledge of charge and spin transport across novel 2D hybrid junctions. In addition, these newly tuned aBN materials, on which no studies have yet been conducted within the Graphene Flagship, will be added to the Samples and Materials Database as standard references. MINERVA brings together complementary expertises and is characterized by a high level of interaction between partners. UCBL will coordinate MINERVA and synthesize controlled aBN samples. ICN2 and UU will respectively perform measurements of thermal conductivity and charge and spin transport. UCLouvain and ICN2 will simulate spin-dependent transport throughout aBN films and investigate the coupling between aBN electronic properties and ferromagnetic materials. MINERVA will bring new materials and technological devices to the Flagship consortium, thereby supporting its industrial objectives.