This paper presents recent progress in resistive oxide memories and their integration into advanced embedded nonvolatile memory technology nodes. With the downscaling trends in emerging semiconductor manufacturing and novel user needs such as higher density, low power consumption, high speed and reliable memories are needed by manufacturers. Two terminal memory cells based on resistive devices as oxides, phase change materials or magnetism are discussed in terms of power consumption, read/write speeds, scalability and effective cost. The experimental results are focused on oxide RRAMs with an emphasis on resistive switching of Metal/HfO2/Metal memory stacks and associated physical and electrical characteristics.