The electric-field control of magnetism is a highly promising and potentially effective approach for realizing energy-efficient applications. Recent interest has focused on the magneto-ionic effect in synthetic antiferromagnets, driven by its potential to enable high-density data storage devices with ultra-low power consumption. However, the underlying mechanism responsible for the magneto-ionic effect on the interlayer exchange coupling remains elusive. In our work, we find that the modulation of the interlayer exchange coupling is highly sensitive to the thickness of the ferromagnetic layer. We have identified that the changes in the interlayer exchange coupling induced by the gate voltage can be associated with the magneto-ionic effects on the top ferromagnetic layer of the synthetic antiferromagnet. The direct contact between the high ion mobility oxide and the top ferromagnetic layer plays a crucial role in facilitating these effects, largely modifying the anisotropy of the layers. Our findings highlight the important role of magneto-ionic control over the properties of the top ferromagnetic layer in governing the observed modifications in the interlayer exchange coupling. This study provides crucial insight into the intricate interplay between stack structure and magneto-ionic effect on magnetic properties in synthetic antiferromagnetic thin film systems.