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handle: 10261/9154
A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant insulation has been developed at CNM-IMB within the RD50 collaboration framework. The p-spray insulation has been designed to withstand the ionising irradiation dose expected in the middle region of the ATLAS tracking system for the future Super-LHC. Detectors have been fabricated with Float Zone and Magnetic Czochralski p-type high resistivity silicon substrates in the Clean Room facility of CNM-IMB, irradiated with neutrons up to a fluence of 10^15 neutrons cm(-2) and characterised at IFIC-Valencia. The results show a charge collection efficiency below 40% at 1000V bias voltage.
Printed version published on Sep 1, 2007.-- Issue title: Proceedings of the 6th "Hiroshima" Symposium on the Development and Application of Semiconductor Detectors (Carmel, CA, Sep 11-15, 2006).
4 pages, 5 figures.-- PACS nrs.: 29.40.Gx; 29.40.Wk.-- ISI Article Identifier: 000249604700011
Peer reviewed
Super-LHC, Silicon, p-Type microstrip silicon radiation detectors, [PACS] Solid-state detectors, [PACS] Tracking and position-sensitive detectors
Super-LHC, Silicon, p-Type microstrip silicon radiation detectors, [PACS] Solid-state detectors, [PACS] Tracking and position-sensitive detectors
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