Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires

descriptionPublicationkeyboard_double_arrow_right Article 29 Sep 2008 Netherlands, Spain Publisher:IOP PublishingJournal:Nanotechnology, volume 19, page 445,601 (issn: 0957-4484, eissn: 1361-6528,

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Authors: Ulloa Herrero, José María; Koenraad, P.M.; Fuster, David; González Soto, Luisa; González Diez, M. Yolanda; Gonzalez, M.U;

doi: 10.1088/0957-4484/19/44/445601

pmid: 21832733

handle: 10261/17359

Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires

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Abstract

The growth mechanism of stacked InAs/InP(001) quantum wires (QWRs) is studied by combining an atomic-scale cross-sectional scanning tunnelling microscopy analysis with in situ and in real-time stress measurements along the [110] direction (sensitive to stress relaxation during QWR formation). QWRs in stacked layers grow by a non-Stranski-Krastanov (SK) process which involves the production of extra InAs by strain-enhanced As/P exchange and a strong strain driven mass transport. Despite the different growth mechanism of the QWR between the first and following layers of the stack, the QWRs maintain on average the same shape and composition in all the layers of the stack, revealing the high stability of this QWR configuration.

Countries

Netherlands, Spain

Related Organizations

Spanish National Research Council
Spain
Eindhoven University of Technology
Netherlands
Universidad Politécnica de Madrid
Spain
Technical University Eindhoven
Netherlands

Keywords

MBE, III-V semiconductor nanostructures, X-STM, Quantum wires, Física

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