High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10 Ωcenterdotcm were irradiated with neutrons up to a fluence of 2 × 1016 neq/cm2 and characterized using edge-TCT. It was found that, within the measured fluence range, the active region and the collected charge reach a maximum at about 7 × 1015 neq/cm2 to decrease to the level of the unirradiated detector after 2 × 1016 neq/cm2.

The research leading to these results has received funding from the European Commission under the FP7 Research Infrastructures project AIDA, grant agreement no. 262025. This work has been partially supported by the Spanish Ministry Economy and Competitiveness (MINECO) under grant number FPA2013-48387-C6-1-P.

Peer Reviewed