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While the introduction of large, bulky substituents such as tert-butyl, -SiMe3, or -Si(isopropyl)3 has been used recently to control the solid state structures and charge mobility of organic semiconductors, this crystal engineering strategy is usually avoided in molecular metals where a maximized overlap is sought. In order to investigate such steric effects in single component conductors, the ethyl group of the known [Au(Et-thiazdt)2] radical complex has been replaced by an isopropyl one to give a novel single component molecular conductor denoted [Au(iPr-thiazdt)2] (iPr-thiazdt: N-isopropyl-1,3-thiazoline-2-thione-4,5-dithiolate). It exhibits a very original stacked structure of crisscross molecules interacting laterally to give a truly three-dimensional network. This system is weakly conducting at ambient pressure (5 S·cm(-1)), and both transport and optical measurements evidence a slowly decreasing energy gap under applied pressure with a regime change around 1.5 GPa. In contrast with other conducting systems amenable to a metallic state under physical or chemical pressure, the Mott insulating state is stable here up to 4 GPa, a consequence of its peculiar electronic structure.
gold dithiolene complex, high-pressure, ligands, superconductors, stabilization, dithiadiazafulvalene, [CHIM] Chemical Sciences, augmented-wave method, molecular-metal au(tmdt)(2), transistors, dmit
gold dithiolene complex, high-pressure, ligands, superconductors, stabilization, dithiadiazafulvalene, [CHIM] Chemical Sciences, augmented-wave method, molecular-metal au(tmdt)(2), transistors, dmit
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