Charge sensitive amplifier study in 2um FD SOI CMOS
L. Soung Yee; E. Martin; E. Cortina; C. Renaux; D. Flandre;
Charge sensitive amplifier study in 2um FD SOI CMOS
A charge sensitive amplifier in 2um Fully Depleted (FD) Silicon on Insulator (SOI) CMOS technology has been designed according to the specifications of a silicon radiation detector. A set of five amplifiers has been produced in order to study the noise dependence on the input transistor size. Initial DC measurements are presented to validate the simulations.
- Université Catholique de Louvain Belgium
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selected citations
Citations provided by BIP!
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
Citations provided by BIP!popularityPopularity provided by BIP!
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
Popularity provided by BIP! 3
Average
Top 10%
Average
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