Modern switching components for energy processing widely consist of active semiconductor devices in Si, a mature and well-established technology that is reaching its physical limits. The main limitations of Si concern the blocking voltage capability, the switching frequency, and the operating temperature. Depending on the voltage range, Si metal-oxide-semiconductor field-effect transistors (MOSFETs) and Si insulated-gate bipolar transistors (IGBTs) are the most common switches adopted for voltage ratings up to 10 kV. More in detail, Si MOSFETs are available for voltage lower than 600 V (super junction (Si) technology), while Si IGBTs are widely adopted for applications in a voltage range from 600 V up to 10 kV. While the Si MOSFET technology is still suitable for applications up to 600 V, the high switching frequency requirements coming from the market are pushing for the development of faster switching devices for the voltage range from 600 V to 10 kV. The main drawbacks of the Si IGBTs, commonly used in this range, are the very high on-state voltage drop and the switching losses, because of the bipolar nature of these devices.