Thermal quenching of extrinsic photoluminescence of GaAs-Ga1-x Al x As single quantum well

descriptionPublicationkeyboard_double_arrow_right Article 01 Oct 1988 English Publisher:Springer Science and Business Media LLCJournal:Il Nuovo Cimento D, volume 10, pages 1,243-1,248 (issn: 0392-6737,

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Authors: Y. Chen; A. Hameury; J. Massies; C. Neri;

doi: 10.1007/bf02455867

Thermal quenching of extrinsic photoluminescence of GaAs-Ga1-x Al x As single quantum well

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Abstract

The temperature dependence of the emission intensity due to conduction band-to-neutral acceptor recombination (e-A0) is investigated in a GaAs/Ga0.7Al0.3As single quantum well. It is shown that the thermal quenching of the (e-A0) emission peak is not monotonous with temperature. The increase of the (e-A0) emission intensity up to about 30 K is interpreted as a consequence of the ionization of shallow donors, while the decrease in emission intensity at higher temperature is due to ionization of neutral acceptors.

Related Organizations

French National Centre for Scientific Research
France
Centre national de la recherche scientifique
France
Scuola Normale Superiore
Italy

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