High isolation series‐shunt photoconductive microwave switch
Copyright policy )High isolation series‐shunt photoconductive microwave switch
AbstractThis article presents a wide band compact high isolation photoconductive switch, which is based on the series‐shunt switch design with three photoconductive switches made of diced high‐resistivity silicon wafer placed over a microstrip gap and activated by 808‐nm near‐infrared laser diodes. The switch shows an insertion loss of 1.2 dB and an isolation of 44.8 dB at 2 GHz. It is easy to operate and control by light, high‐speed, electromagnetically transparent and it does not require any biasing circuits. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1168–1170, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27507
photoconducting devices, Electrónica, microswitches, optical switches, microwave technology, switching circuits
photoconducting devices, Electrónica, microswitches, optical switches, microwave technology, switching circuits
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