On the Extraction of Charge Carrier Mobility in High‐Mobility Organic Transistors
Copyright policy )On the Extraction of Charge Carrier Mobility in High‐Mobility Organic Transistors
Transistor parameter extraction by the conventional transconductance method can lead to a mobility overestimate. Organic transistors undergoing major contact resistance experience a significant drop in mobility upon mild annealing. Before annealing, strong field-dependent contact resistance yields nonlinear transfer curves with locally high transconductances, resulting in a mobility overestimate. After annealing, a contact resistance below 200 Ω cm is achieved, which is stable over a wide V(G) range.
- Tokyo University of Science Japan
- Osaka University Japan
- Japan Research Institute Japan
- INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW Belgium
- University of Tokyo Japan
Technology, Chemistry, Multidisciplinary, contact resistance, Materials Science, Materials Science, Multidisciplinary, SEMICONDUCTOR, 09 Engineering, Physics, Applied, THICKNESS, Nanoscience & Nanotechnology, carrier mobility, 40 Engineering, Science & Technology, 02 Physical Sciences, CONTACT RESISTANCE, Chemistry, Physical, Physics, organic transistors, 34 Chemical sciences, Chemistry, Physics, Condensed Matter, Physical Sciences, Science & Technology - Other Topics, THIN-FILM TRANSISTORS, field-effect mobility, INJECTION, 51 Physical sciences, 03 Chemical Sciences
Technology, Chemistry, Multidisciplinary, contact resistance, Materials Science, Materials Science, Multidisciplinary, SEMICONDUCTOR, 09 Engineering, Physics, Applied, THICKNESS, Nanoscience & Nanotechnology, carrier mobility, 40 Engineering, Science & Technology, 02 Physical Sciences, CONTACT RESISTANCE, Chemistry, Physical, Physics, organic transistors, 34 Chemical sciences, Chemistry, Physics, Condensed Matter, Physical Sciences, Science & Technology - Other Topics, THIN-FILM TRANSISTORS, field-effect mobility, INJECTION, 51 Physical sciences, 03 Chemical Sciences
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