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handle: 20.500.14243/391203 , 20.500.11770/288741 , 11697/140827
AbstractPtTe2 is a novel transition‐metal dichalcogenide hosting type‐II Dirac fermions that displays application capabilities in optoelectronics and hydrogen evolution reaction. Here it is shown, by combining surface science experiments and density functional theory, that the pristine surface of PtTe2 is chemically inert toward the most common ambient gases (oxygen and water) and even in air. It is demonstrated that the creation of Te vacancies leads to the appearance of tellurium‐oxide phases upon exposing defected PtTe2 surfaces to oxygen or ambient atmosphere, which is detrimental for the ambient stability of uncapped PtTe2‐based devices. On the contrary, in PtTe2 surfaces modified by the joint presence of Te vacancies and substitutional carbon atoms, the stable adsorption of hydroxyl groups is observed, an essential step for water splitting and the water–gas shift reaction. These results thus pave the way toward the exploitation of this class of Dirac materials in catalysis.
TRANSITION-METAL DICHALCOGENIDES, CHROMIUM COMPOUNDS, -, SURFACE SCIENCE, CHEMICAL SHIFT, VIBRATIONAL SPECTROSCOPY, PLATINUM COMPOUNDS, CARBON, WATER GAS SHIFT, X RAY PHOTOELECTRON SPECTROSCOPY, DENSITY FUNCTIONAL THEORY, DENSITY OF GASES, TELLURIUM COMPOUNDS, TRANSITION METALS, WATER GAS SHIFT (WGS) REACTION, AMBIENT ATMOSPHERE, PRISTINE SURFACES, TRANSITION METAL DICHALCOGENIDES, X-RAY PHOTOELECTRON SPECTROSCOPY, HYDROGEN EVOLUTION REACTIONS, SURFACE CHEMICAL REACTIVITY, APPLICATION CAPABILITY
TRANSITION-METAL DICHALCOGENIDES, CHROMIUM COMPOUNDS, -, SURFACE SCIENCE, CHEMICAL SHIFT, VIBRATIONAL SPECTROSCOPY, PLATINUM COMPOUNDS, CARBON, WATER GAS SHIFT, X RAY PHOTOELECTRON SPECTROSCOPY, DENSITY FUNCTIONAL THEORY, DENSITY OF GASES, TELLURIUM COMPOUNDS, TRANSITION METALS, WATER GAS SHIFT (WGS) REACTION, AMBIENT ATMOSPHERE, PRISTINE SURFACES, TRANSITION METAL DICHALCOGENIDES, X-RAY PHOTOELECTRON SPECTROSCOPY, HYDROGEN EVOLUTION REACTIONS, SURFACE CHEMICAL REACTIVITY, APPLICATION CAPABILITY
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