Semiconductors from so called 6.1A group GaSb-InAs-AlSb are having unique features such as high mobility, type 2 bandgap lineup, which makes them attractive materials for high- end applications in solar cells, thermophotovoltaic cells, IR emitters, IR detectors, TFET transistors or new types of RAM memory(UltraRAM). This work share information about growth of GaSb, lattice matched InGaAsSb and AlGaAsSb on (100) GaSb substrates in Aix-200 horizontal MOCVD reactors: 1) assisted by Reflectance Anisotropy Spectroscopy (RAS) in-situ monitoring.[1], [2]. 2) standard Aix-200 RF without in-situ monitoring The target layer structure to be developed is eSWIR barrier detector structure aimed at unbiased operation at 300K.