The metals and metal oxide semiconductors (MOS) are classified on the energy band gap between conduction and valance bands. The energy band gap of any material indicating amount of energy required to charges to migrate from valance band to conduction band. In another way we can say that the band gap between to bands is nothing but a one type of barrier or resistance for charge carriers. The MOS thick or thin films has various applications like gas sensors, biosensors and others. The working principle of MOS based sensor is based on the change in resistance when particular material is in contact with particular gas molecules or enzyme. The electrical properties of any material is important parameter in any applications. Hence the current research work focused on the investigation of electrical properties of CuO-ZnO thick films. Thick films were prepared on glass substrate by screen printing technique. The electrical properties of prepared CuO-ZnO thick films were investigated by using resistivity, temperature coefficient resistance, and activation energy. The impact of wt. % ZnO additive on the electrical properties of CuO is described in the current research article.