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Part of this work was supported by the European project MEMQuD, code 20FUN06, funder ID: 10.13039/100014132. This project (EMPIR 20FUN06 MEMQuD) has received funding from the EMPIR programme co-financed by the Participating States and from the European Union's Horizon 2020 research and innovation programme.
This is the dataset of "Resistive switching and role of interfaces in memristive devices based on amorphous NbOx grown by anodic oxidation"
resistive switching, niobium oxide, quantized conductance, anodic oxidation, memristive devices
resistive switching, niobium oxide, quantized conductance, anodic oxidation, memristive devices
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