{"references": ["[Delage] S. Delage, WO2019020737 \u2013 Metal-based transistor comprising materials comprising at least one group III element and one group V element, international filing date: 26.07.2018", "[Meng] X.F. Meng,R.S. Amos, A.W. Lichtenberger, R.J. Mattauch, and M.J. Feldnian ; NbN Edge Junction Fabrication : Edge Profile Control by Reactive Ion Etching ; IEEE Transactions on Magnetics, Vol. 25 n\u00b02, pp. 1239-1242, March 1989 ;", "[Guo] S. Guo, Q. Chen, D. Pan, Y. Wu, X. Tu, G. He, H. Han, F. Li, X. Jia, Q. Zhao, H. Zhang, X. Bei, J. Xie, L. Zhang, J. Chen, L. Kang, P. Wu ; Fabrication of superconducting niobium nitride nanowire with high aspect ratio for X-ray photon detection ; Nature (2020) 10:9057 | https://doi.org/10.1038/s41598- 020-65901-5", "[Sreennidhi] T. Sreenidhi, K. Baskar, A. DasGupta, N. DasGupta ; Reactive ion etching of GaN in SF6 + Ar and SF6 + N2 plasma ; Semicond. Sci. Technol. 23 (2008) 125019 (7pp) ; doi:10.1088/0268- 1242/23/12/125019", "[EMPy] https://wiki.nanotech.ucsb.edu/wiki/Laser_Etch_Monitor_Simulation_in_Python", "[Du] X.K. Du, T.M. Wang, C. Wang, B.L. Chen, L. Zhou ; Microstructure and Optical Characterization of Magnetron Sputtered NbN Thin Films ; Chinese Journal of Aeronautics 20(2007) 140-144 ; https://doi.org/10.1016/S1000-9361(07)60021-1"]}

Niobium Nitride (NbN) is metallic at room temperature. NbN / III-N heterostructures are of interest for new devices applications such as the Metal Base Transistor (MBT). Niobium Nitride etching in fluorine plasma is documented by Reactive Ion Etching (RIE). In this document we present the etching of a III-Nitride NbN heterostructure with fluorine chemistry Inductively Coupled Plasma (ICP).