Powered by OpenAIRE graph
Found an issue? Give us feedback
image/svg+xml art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos Open Access logo, converted into svg, designed by PLoS. This version with transparent background. http://commons.wikimedia.org/wiki/File:Open_Access_logo_PLoS_white.svg art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos http://www.plos.org/ ZENODOarrow_drop_down
image/svg+xml art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos Open Access logo, converted into svg, designed by PLoS. This version with transparent background. http://commons.wikimedia.org/wiki/File:Open_Access_logo_PLoS_white.svg art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos http://www.plos.org/
ZENODO
Article . 2017
License: CC BY
Data sources: Datacite
image/svg+xml art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos Open Access logo, converted into svg, designed by PLoS. This version with transparent background. http://commons.wikimedia.org/wiki/File:Open_Access_logo_PLoS_white.svg art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos http://www.plos.org/
ZENODO
Article . 2017
License: CC BY
Data sources: ZENODO
image/svg+xml art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos Open Access logo, converted into svg, designed by PLoS. This version with transparent background. http://commons.wikimedia.org/wiki/File:Open_Access_logo_PLoS_white.svg art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos http://www.plos.org/
ZENODO
Article . 2017
License: CC BY
Data sources: Datacite
versions View all 2 versions
addClaim

Metal-Oxide-Semiconductor-Only Process Corner Monitoring Circuit

Authors: Mirzoyan, Davit; Khachatryan, Ararat;

Metal-Oxide-Semiconductor-Only Process Corner Monitoring Circuit

Abstract

{"references": ["T. Chen, \"Challenges for silicon technology scaling in the Nanoscale Era,\" \tProc. of ESSCIRC, pp. 1-7, Sept. 2009.", "Y. Li, Ch. Hwang, T. Li, M. Han, \"Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies,\" IEEE Trans. on Electron Devices, pp. 437 \u2013 447, Feb. 2010.", "Y. Ohnari, A.A. Khan, A. Dutta, M. M. Mattausch, H. J. Mattausch, \"Die-to-die and within-die variation extraction for circuit simulation with surface-potential compact model,\" IEEE Int. Conf. on Microelectronic Test Structures (ICMTS), pp. 146-150, March 2013.", "L. Pang, B. Nikolic, \"Measurements and analysis of process variability in 90nm CMOS,\" IEEE J. Solid-State Circuits, pp.1655-1663, May 2009.", "C. H. Kim, K. Roy, S. Hsu, R. Krishnamurthy, S. Borkar, \"A process variation compensating technique with an on-die leakage current sensor for nanometer scale dynamic circuits,\" IEEE Trans. on VLSI Systems, pp.646-649, 2006.", "K. Kim, F. Ge, K. Choi, \"On-chip process variation monitoring circuit based on gate leakage sensing\", Electronics Letters, pp. 235 \u2013 236, 2010.", "A. Ghosh, R. M. Rao, J. J. Kim, Ch. Chuang, R. B. Brown, \"Slew-Rate Monitoring Circuit for On-Chip Process Variation Detection,\" IEEE Trans. on VLSI Systems, pp. 1683-1692, 2013.", "Ch. Chen, H. Tseng, R. Kuo, Ch. Wang, \"On-chip MOS PVT variation monitor for slew rate self-adjusting 2\u00d7VDD output buffers,\" IEEE Int. Conf. on IC Design & Technology, pp.1-4, 2012.", "H. Mostafa, M. Anis, M. Elmasry, \"On-Chip Process Variations Compensation Using an Analog Adaptive Body Bias (A-ABB),\" IEEE Trans. on VLSI Systems, pp. 770 \u2013 774, April 2012.\n[10]\tB. Razavi, \"Design of Analog CMOS Integrated Circuits,\" McGraw- Hill Education, 2016.\n[11]\tN.Z. Butt, J.B. Johnson, \"Modeling and Analysis of Transistor Mismatch Due to Variability in Short-Channel Effect Induced by Random Dopant Fluctuation,\" IEEE Electron Device Letters, pp.1099-1101, Aug. 2012.\n[12]\tH. Li, H. Chen, Q. Dong, L. Chen, J. Wang, J. Kim, Sh. Yu, J. Wu, Y. LinBashir, L. Milor, \"Process optimization for random threshold voltage variation reduction in nanoscale MOSFET by 3D simulation,\" IEEE 11th Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT), pp.1-3, Oct. 2012."]}

A process corner monitoring circuit (PCMC) is presented in this work. The circuit generates a signal, the logical value of which depends on the process corner only. The signal can be used in both digital and analog circuits for testing and compensation of process variations (PV). The presented circuit uses only metal-oxide-semiconductor (MOS) transistors, which allow increasing its detection accuracy, decrease power consumption and area. Due to its simplicity the presented circuit can be easily modified to monitor parametrical variations of only n-type and p-type MOS (NMOS and PMOS, respectively) transistors, resistors, as well as their combinations. Post-layout simulation results prove correct functionality of the proposed circuit, i.e. ability to monitor the process corner (equivalently die-to-die variations) even in the presence of within-die variations.

Keywords

Detection, monitoring, process variation., process corner

  • BIP!
    Impact byBIP!
    selected citations
    These citations are derived from selected sources.
    This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
    0
    popularity
    This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
    Average
    influence
    This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
    Average
    impulse
    This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
    Average
    OpenAIRE UsageCounts
    Usage byUsageCounts
    visibility views 2
    download downloads 22
  • 2
    views
    22
    downloads
    Powered byOpenAIRE UsageCounts
Powered by OpenAIRE graph
Found an issue? Give us feedback
visibility
download
selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
views
OpenAIRE UsageCountsViews provided by UsageCounts
downloads
OpenAIRE UsageCountsDownloads provided by UsageCounts
0
Average
Average
Average
2
22
Green