The structural and electrical properties of Mo thin films have been studied to assess the potential of Mo as an alternative to Cu or W metallization. The adhesion energy with dense low-κ dielectrics was above 5 J/m2, suggesting that Mo can be integrated without the need for an adhesion liner. The Mo esistivity was lower than W in the entire thickness range between 3 and 50 nm and lower than Cu sandwiched between 1.5 nm TaN barriers for total a stack thickness below 8 nm. Mo thusappears promising as an interconnect metal, especially a potential replacement for W. Poster presented at the 2019 IEEE International Interconnect Technology Conference