Total Ionizing Dose Response of Commercial Process for Synthesis of Linear Bipolar Integrated Circuits
Total Ionizing Dose Response of Commercial Process for Synthesis of Linear Bipolar Integrated Circuits
In this paper are presented results of commercial bipolar integrated circuits examinations in gamma and X radiation fields, for medium dose rate ionizing radiation. Voltage regulators "STMicroelectronics" L4940V5, made by 20V "High Density Super Signal/Power Process" (HDS2 /P2 ) were exposed to 1,25 MeV photons of gamma radiation and 150 keV bremsstrahlung photons. By the examination of maximum output current, serial transistor dropout voltage and line regulation characteristics was detected high radiation hardness of the mentioned process. Mechanisms of ionizing radiation influence on semiconductor and insulator are analyzed. The main reasons of high HDS2 /P2 process radiation reliability were identified.
Ionizing radiation, Radiation hardness, Analog integrated circuit, Bipolar transistor
Ionizing radiation, Radiation hardness, Analog integrated circuit, Bipolar transistor
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