CNFET Based Basic Gates and a Novel FullAdder Cell

descriptionPublicationkeyboard_double_arrow_right Article 30 Jun 2012Publisher:Academy and Industry Research Collaboration Center (AIRCC)Journal:International Journal of VLSI Design & Communication Systems, volume 3, pages 11-19 (issn: 0976-1527,

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Authors: Fazel Sharifi; Amir Momeni; keivan Navi;

doi: 10.5121/vlsic.2012.3302

CNFET Based Basic Gates and a Novel FullAdder Cell

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Abstract

In this paper two novel high performance designs for AND and OR basic gates and a novel Full-Adder Cell are presented. These designs are based on carbon nanotube technology. In order to compare the proposed designs with previous ones both MOSFET based and CNFET based circuits are selected. By the way the proposed designs have better performance in comparison with previous designs in terms of speed, power consumption and power-delay product (PDP).

Related Organizations

Shahid Beheshti University
Iran (Islamic Republic of)

Keywords

MOSFET, CNFET, Full-Adder cell, Basic gates

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