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Resistivity of Fe Al Multilayered Thin Films from Low Temperature to Room Temperature

descriptionPublicationkeyboard_double_arrow_right Article 28 Feb 2020Publisher:Blue Eyes Intelligence Engineering and Sciences Engineering and Sciences Publication - BEIESPJournal:International Journal of Engineering and Advanced Technology, volume 9, pages 39-43 (eissn: 2249-8958,

Authors: Veeranna Kalkori; Santosh Kori; Shweta C; R. Rawat;

doi: 10.35940/ijeat.f8970.029320

Resistivity of Fe Al Multilayered Thin Films from Low Temperature to Room Temperature

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Abstract

By using electron beam gun and thermal deposition techniques in the vacuum range 6 x10-5mbar. The pure materials of 99.99% purity of iron and aluminium multilayers films grown on glass substrates at 300K in the following viz. The resistance was measured using four probe method at UGC-DAE Consortium Indore (4.2K to 300K) later resistivity, conductivity, temperature co-efficient of resistance (TCR), residual resistivity ratio (RRR) , and activation energy(Ea) were calculated. The resistivity behavior shown that the resistivity is increased with increasing the n value, resistivity is increased with increasing temperature. The data belonging to metallic region has been analyzed using the conventional power law’s and it is first time this set of films have explore resistivity at low temperature

Related Organizations

UGC DAE Consortium for Scientific Research
India

Keywords

thin films, multilayers, RRR, TCR, Power laws

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