Ultrathin single- and three-stage Cu(In,Ga)Se2 absorber layers were analyzed with room temperature photoluminescence (PL) spectra. An anomalous blueshift was observed upon increasing carrier injection for both samples. This blueshift was attributed to the presence of bandgap fluctuations that are of the same order as the minority carrier diffusion length. From time resolved measurements, a diffusion length of a few 100 nms was deduced. The single-stage spectrum consists of two peaks, and the sample was, therefore, also analyzed by hyperspectral imaging, providing lateral PL and reflectance data with 1 μm resolution. Marginal variations were observed in the PL yield and spectra. This homogeneity could again be attributed to an intermediate scale of the bandgap fluctuation with an upper limit of 1 μm for the scale of the lateral bandgap fluctuations. The two peaks in the PL spectra of the single-stage sample could be attributed to interference, and correction methods were applied. The bandgap fluctuations were extracted for the three-stage and single-stage sample and were 45 meV and 72 ± 3 meV, respectively. It is suggested that this difference is attributed to the smaller grains and larger amount of grain boundaries in the single-stage sample.