Epitaxial graphene on silicon carbide, or epigraphene, provides an excellent platform for Hall sensing devices in terms of both high electrical quality and scalability. However, the challenge in controlling its carrier density has thus far prevented systematic studies of epigraphene Hall sensor performance. In this work, we investigate epigraphene Hall sensors where epigraphene is doped across the Dirac point using molecular doping. Depending on the carrier density, molecular-doped epigraphene Hall sensors reach room temperature sensitivities of SV = 0.23 V/(VT) and SI = 1440 V/(AT), with magnetic field detection limits down to BMIN = 27 nT/√Hz at 20 kHz. Thermally stabilized devices demonstrate operation up to 150 °C with SV = 0.12 V/(VT), SI = 300 V/(AT), and BMIN ∼100 nT/√Hz at 20 kHz. Our work demonstrates that epigraphene doped close to the Dirac point could potentially outperform III–V Hall elements in the extended and military temperature ranges.