
Abstract: We report the 300-mm wafer-scale performance of Silicon-contacted Ge-on-Si lateral separateabsorption charge multiplication avalanche photodetectors, demonstrating sub-μA dark currentsconsistently across the wafer, with responsivities of 6 A/W at 22 GHz bandwidth or 2 A/W at 35 GHz.
| selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | 3 | |
| popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network. | Top 10% | |
| influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | Average | |
| impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network. | Average |
