Ultra-thin nanocrystalline n-type silicon oxide front contact layers for rear-emitter silicon heterojunction solar cells

descriptionPublicationkeyboard_double_arrow_right Article 01 Jun 2018 English Publisher:Elsevier BVJournal:Solar Energy Materials and Solar Cells, volume 179, pages 386-391 (issn: 0927-0248,

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Authors: Mazzarella, L.; Morales-Vilches, A.B.; Korte, L.; Schlatmann, R.; Stannowski, B.;

doi: 10.1016/j.solmat.2018.01.034

Ultra-thin nanocrystalline n-type silicon oxide front contact layers for rear-emitter silicon heterojunction solar cells

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Abstract

Abstract Hydrogenated nanocrystalline silicon oxide (nc-SiOx:H) films have demonstrated a unique combination of low parasitic absorption and high conductivity. Here, we report on the use of n-type nc-SiOx:H as front surface field (FSF) in rear-emitter silicon heterojunction (SHJ) solar cells exhibiting excellent electrical cell parameters at a thickness down to only 5 nm. Using a seed layer, we are able to maintain excellent electrical performance (high fill factor (FF) and open circuit voltage (VOC)), while enhancing layer transparency for maximizing short circuit current (JSC). These results, together with the short deposition time (

Related Organizations

Helmholtz Association of German Research Centres
Germany
Helmholtz Zentrum München
Germany
Helmholtz-Zentrum Berlin für Materialien und Energie
Germany

Keywords

Nanocrystalline silicon oxide, Optical simulations, Silicon, Silicon heterojunction (SHJ) solar cells.

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