A liquid-precursor process was used to produce an epitaxial all-oxide ferroelectric memory device structure. The lanthanum strontium manganate–lead zirconate titanate–lanthanum strontium manganate (LSMO–PZT–LSMO) structure used for this device shows excellent polarization and fatigue behavior with a remnant polarization Pr of 42 µC/cm2 and a coercive field Ec of 68 keV. The polarization was found to only slightly degrade after over 1010 fatigue cycles. This behavior is contrasted with epitaxial PZT using a metal top electrode. In addition, the use of a top LSMO electrode was a sufficient barrier to Pb loss during heating to allow subsequent (or prolonged) heat treatments that would generally lead to Pb loss.