Structural properties and vertical transport in ZnSe/CdSe superlattices grown on an In0.3Ga0.7As metamorphic buffer layer
Copyright policy )Structural properties and vertical transport in ZnSe/CdSe superlattices grown on an In0.3Ga0.7As metamorphic buffer layer
AbstractWe report on the growth by molecular‐beam epitaxy of short‐period ZnSe/CdSe superlattices (SLs) on an In0.3Ga0.7As metamorphic buffer layer. Such SLs are considered as a promising material for a wide band‐gap photoactive p‐n junction in a hybrid monolithic Ge/InxGa1‐xAs/Iny(Al,Ga)1‐yAs/II‐VI solar cell. Lattice‐matching of the SLs to the In0.3Ga0.7As layer is confirmed by X‐ray diffractometry. Vertical transport of photoexcited carriers is investigated by means of both steady state and time‐resolved photoluminescence techniques in heterostructures containing the ZnSe/CdSe SL with an enlarged quantum well (EQW). Characteristic times of the carrier transport across the SL towards EQW are evaluated in the temperature range 120–300 K. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
- Linköping University Sweden
- Ioffe Institute Russian Federation
selected citations These citations are derived from selected sources.This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).0 popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.Average influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).Average impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.Average
Citations provided by BIP!Popularity provided by BIP!