Anisotropic empty electron-band states at the pseudo-5×5 Si(111)/Cu interface
Copyright policy )Anisotropic empty electron-band states at the pseudo-5×5 Si(111)/Cu interface
La densite partielle (s-d) des etats inoccupes sur le site Cu dans la pseudo-interface 5×5 Si(111)/Cu est examinee par la spectroscopie d'absorption de rayons-X dependante de la polarisation, aux seuils Cu L 2,3. Les spectres d'absorption sont fortement dichroiques, mettant en evidence l'existence d'un seuil metallique dans le plan interfacial et d'une quasi-bande interdite dans la direction perpendiculaire. La nature «bidimensionnelle» des etats des bandes electroniques dans la pseudocouche interfaciale 5×5 est par consequent montree directement
- University of Paris-Saclay France
- University of Paris France
- Polytechnic University of Milan Italy
- University of Milan Italy
3D transition-metals; x-Ray absorption; inverse photoemission; atomic-structure; diffraction; silicon; spectra; edges
3D transition-metals; x-Ray absorption; inverse photoemission; atomic-structure; diffraction; silicon; spectra; edges
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