Accurate modeling of nonlinear microwave devices is critical for reliable design of microwave circuit and system. In this paper, a more general Neuro-SM method, i.e., an enhanced dynamic neuro-space mapping (Neuro-SM) is proposed to fulfill the needs of the increased modeling complexity. The proposed technique retains the ability of the existing dynamic Neuro-SM in modifying the dynamic voltage relationship between the coarse model and the desired model. The proposed Neuro-SM also considers output/current mapping besides input/voltage mappings. In this way, the enhanced dynamic Neuro-SM can produce a more accurate model of microwave devices with more dynamics and nonlinearity. The validity and efficiency of the enhanced dynamic Neuro-SM method are demonstrated through a high-electron mobility transistor (HEMT) modeling example.