Border Trap Characterizations of Al2O3/ZrO2 and Al2O3/HfO2 Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type 15 Mar 2020 English Publisher:MDPI AGJournal:Nanomaterials, volume 10, page 527 (eissn: 2079-4991,

Copyright policy )

Authors: Md. Mamunur Rahman; Dae-Hyun Kim; Tae-Woo Kim;

doi: 10.3390/nano10030527

pmid: 32183413

pmc: PMC7153472

Border Trap Characterizations of Al2O3/ZrO2 and Al2O3/HfO2 Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress

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Abstract

This study represents a comparison of the border trap behavior and reliability between HfO2 and ZrO2 films on n-In0.53Ga0.47As with an Al2O3 interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N2:H2 mixed FGA passivates the border trap quite well, whereas N2-based RTA performs better on interface traps. Al2O3/HfO2 showed more degradation in terms of the threshold voltage shift while Al2O3/ZrO2 showed higher leakage current behavior. Moreover, Al2O3/ZrO2 showed a higher permittivity, hysteresis, and breakdown field than Al2O3/HfO2.

Related Organizations

University of Ulsan
Korea (Republic of)
University of Ulsan
Korea (Republic of)
Canadian University of Bangladesh
Bangladesh
Kyungpook National University
Korea (Republic of)

Keywords

III–V semiconductor, post metal annealing, interface trap, constant voltage stress, Article, Chemistry, atomic layer deposition, iii–v semiconductor, border trap, high-<i>k</i>, QD1-999

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