PZT film on silicon by electrophoretic deposition Pietro Galizia, Carlo Baldisserri, Carmen Galassi CNR-ISTEC Via Granarolo, 64, I-48018 Faenza (ITALY) In recent times direct integration of ferroelectrics on silicon wafer has been attracting interest [1]. Electrophoretic deposition (EPD) was investigated in this laboratory [2] as an alternative mean to produce lead zirconate titanate (PZT) film on silicon wafers followed by sintering at 850-950°C. EPD is an easily implemented deposition technique that requires only basic laboratory gear and a sufficiently stable colloidal suspension to produce ceramic and electroceramic films with thickness in the 100 nm - 10 mm range3. It has been found that the EPD of niobium-doped lead zirconate titanate (PZTN), performed in ethanol-based suspensions of PZT on bare silicon wafers on which Al/Si alloyed ohmic contacts were made, produced smooth green films that strongly pinned to the silicon substrate after sintering. Thick and well-adhered sintered PZT films on silicon having thickness about 50 µm were thus obtained. Such structures could be the core of novel on-chip sensors/actuators. The results of the production of thick PZT films by EPD and sintering and some characterizations of the same are reported. Presenting author: Carmen Galassi carmen.galassi@istec.cnr.it, 0039 0546699750 [1] M. Y. Gureev, A. K. Tangatsev, N. Setter; IEEE T Ultrason Ferr, 58, 1959 (2011) [2] C. Baldisserri, D. Gardini, C. Galassi; Sensor Actuat A-Phys, 174, 123 (2012) [3] P. Sarkar, P.S. Nicholson; J Am Ceram Soc, 79, 1987 (1996)