The incorporation of Resonant Tunnel Diodes (RTDs) into III/V transistor technologies has shown an improved circuit performance: higher circuit speed, reduced component count, and/or lowered power consumption. Currently, the incorporation of these devices into CMOS technologies (RTD-CMOS) is an area of active research. Although some works have focused the evaluation of the advantages of this incorporation, additional work in this direction is required. We compare RTD-CMOS and pure CMOS realizations of a network of logic gates which can be operated in a gate-level pipeline. Significant lower average power is obtained for RTD-CMOS implementations.

This work has been funded in part by the Spanish Ministry of Science and Innovation with support from ERDF under Projects TEC2007-67245 and TEC2010-18937 and in part by the Consejería de Innovación, Ciencia y Empresa, Junta de Andalucía under Project TIC-2961.

Comunicación presentada al "V VLSI Circuits and Systems" celebrado en Praga (República Checa) el 18 de Abril del 2011.

Peer Reviewed