Low Gain Avalanche Detectors (LGADs) are based on a n++-p+-p-p++ structure where appropriate doping of multiplication layer (p+) leads to high enough electric fields for impact ionization. Operation of these detectors in harsh radiation environments leads to decrease of gain attributed to the effective acceptor removal in the multiplication layer. In order to cope with that devices were produced where boron was replaced by gallium. The initial radiation hardness studies show a smaller degradation of gain with neutron fluence indicating that gallium is more difficult to displace/deactivate from the lattice site than boron.

Part of this work has been financed by the Spanish Ministry of Economy and Competitiveness through the Particle Physics National Program ( FPA2015-69260-C3-3-R and FPA2014-55295-C3-2-R ) and carried out under the Spanish ICTS Network MICRONANOFABS partially supported by MINECO . The support came also from the European Union’s Horizon 2020 Research and Innovation funding program , under Grant Agreement no. 654168 (AIDA-2020) .

Peer reviewed