Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping

descriptionPublicationkeyboard_double_arrow_right Article 09 Feb 2011 Italy Publisher:IOP PublishingJournal:New Journal of Physics, volume 13, page 23,022 (eissn: 1367-2630,

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Authors: Jordi Gomis-Bresco; Guillermo Muñoz-Matutano; Juan Martínez-Pastor; Benito Alén; Luca Seravalli; Paola Frigeri; Giovanna Trevisi; +1 Authors

doi: 10.1088/1367-2630/13/2/023022

handle: 10261/35948

Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping

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Abstract

We model the time-resolved and time-integrated photoluminescence of a single InAs/GaAs quantum dot (QD) using a random population description. We reproduce the joint power dependence of the single QD exciton complexes(neutral exciton, neutral biexciton and charged trions). We use the model to investigate the selective optical pumping phenomenon, a predominance of the negative trion observed when the optical excitation is resonant to a nonintentional impurity level. Our experiments and simulations determine that the negative charge confined in the QD after exciting resonance to the impurity level escapes in 10 ns.

Thanks are given to ‘Generalitat Valenciana’ Project No. PROMETEO/2009/074 and the Spanish Ministry of Science through Project No. TEC2008-06756-C03-03.

18 páginas, 3 tablas, 9 figuras.-- et al.

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Italy

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InAs/GaAs Quantum Dots

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