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arXiv: 2107.00034
handle: 10261/266203
Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum anomalous Hall effect in bilayer graphene, by separately imprinting spin-orbit and magnetic proximity effects in different layers. This results in varying spin splittings for the conduction and valence bands, which gives rise to a topological gap at a single Dirac cone. The topological phase can be controlled by a gate voltage and switched between valleys by reversing the sign of the exchange interaction. By performing quantum transport calculations in disordered systems, the chirality and resilience of the valley-polarized edge state are demonstrated. Our findings provide a promising route to engineer a topological phase that could enable low-power electronic devices and valleytronic applications.
Final published version. PRB letter: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.104.L161113
Edge states, Quantum anomalous Hall effect, Condensed Matter - Mesoscale and Nanoscale Physics, Spin-orbit couping, Topological materials, Tight-binding model, FOS: Physical sciences, Landauer formula, Valleytronics, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Topological phases of matter, Graphene
Edge states, Quantum anomalous Hall effect, Condensed Matter - Mesoscale and Nanoscale Physics, Spin-orbit couping, Topological materials, Tight-binding model, FOS: Physical sciences, Landauer formula, Valleytronics, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Topological phases of matter, Graphene
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