High temperature creep of 20 vol%. SiC-HfB2 UHTCs up to 2000 °C and the effect of La2O3 addition

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2018 Spain English Publisher:Elsevier BVJournal:Journal of the European Ceramic Society, volume 38, pages 47-56 (issn: 0955-2219,

Copyright policy )Funded by:UKRI | Material Systems for Extr...

Authors: Zapata Solvas, E.; Gómez García, Diego; Domínguez Rodríguez, Arturo; Lee, W. E.;

APC: 3,559.79 EUR

doi: 10.1016/j.jeurceramsoc.2017.08.028

handle: 11441/136095 , 10261/194101

High temperature creep of 20 vol%. SiC-HfB2 UHTCs up to 2000 °C and the effect of La2O3 addition

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Abstract

High temperature compressive creep of SiC-HfB2 UHTCs up to 2000 °C has been studied. Microstructural analysis after deformation reveals formation of new phases in the Hf-B-Si and Hf-B-Si-C systems, which are responsible for the poor creep resistance. RE oxide additions have a negative effect reducing the creep resistance of SiC-HfB2 UHTCs. A simplistic analysis for the required creep resistance is described, indicating that only SiC-HfB2 UHTCs could withstand re-entry conditions for 5 min in a single use. However, RE oxide addition to SiC-HfB2 UHTCs does not provide the required creep resistance for them to be candidate materials for hypersonic applications.

EPSRC grant XMAT (EP/K008749/1)

MINECO AT2015-71411-R

Country

Spain

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Keywords

Cavitation damage, Limited ductility, Ultra-high temperature ceramics, Reaction damage, Creep

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