Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters

descriptionPublicationkeyboard_double_arrow_right Article 14 Oct 2009 English Publisher:American Physical Society (APS)Journal:Physical Review B, volume 80 (issn: 1098-0121, eissn: 1550-235X,

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Authors: Nowak, A. K.; Gallardo, E.; Sarkar, D.; Van der Meulen, H. P.; Calleja, J. M.; Ripalda, José María; González Díez, Yolanda; +1 Authors

doi: 10.1103/physrevb.80.161305

handle: 10261/18076

Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters

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Abstract

We present second-order photon correlation measurements on single InP/(Ga,In)P quantum dots as a function of temperature. Low background emission allows to obtain antibunching minima g(2)(0) below 0.25 up to 45 K. The antibunching time R increases or decreases with temperature depending on the quantum-dot size. The two trends result from a competition between hole thermal excitation and dark-to-bright exciton transitions. The former prevails in smaller dots showing increasing R with temperature, while the latter dominates in larger quantum dots showing decreasing R with temperature.

This work has been supported by research contracts of the Spanish Ministry of Education (Grant No. MAT2008-01555/NAN), Consolider CSD (Grant No. 2006–19), the Community of Madrid (Grant No. CAMS-0505-ESP-0200), and the Spanish Ministry of Science and Innovation (Grant No.Nanoinpho-QD TEC2008-06756-C03-01).

Peer reviewed

Related Organizations

Autonomous University of Madrid
Spain
University of Sheffield
United Kingdom
Spanish National Research Council
Spain
Centro Nacional de Microelectrónica
Spain

Keywords

III-V semiconductors, Indium compounds, Gallium compounds, Semiconductor quantum dots, Excitons

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