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Chemistry of Materials
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Chemistry of Materials
Article . 2016 . Peer-reviewed
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Ultrafast Epitaxial Growth Kinetics in Functional Oxide Thin Films Grown by Pulsed Laser Annealing of Chemical Solutions

Authors: Albert Queraltó; Angel Pérez del Pino; María de la Mata; Jordi Arbiol; Mar Tristany; Xavier Obradors; Teresa Puig;

Ultrafast Epitaxial Growth Kinetics in Functional Oxide Thin Films Grown by Pulsed Laser Annealing of Chemical Solutions

Abstract

The crystallization process and physical properties of different functional oxide thin films (CeZrO, LaNiO, BaSrTiO, and LaSrMnO) on single crystal substrates (YO:ZrO, LaAlO, and SrTiO) are studied by pulsed laser annealing (PLA). A Nd:YAG laser source (λ = 266 nm, 10 Hz and τ ∼3 ns) is employed to crystallize chemical solution deposited (CSD) amorphous/nanocrystalline films under atmospheric conditions. We provide new insight on the influence of photochemical and photothermal interactions on the epitaxial crystallization kinetics of oxide thin films during the transformation from amorphous/polycrystalline material (i.e., atomic diffusion, epitaxial growth rates, and activation energies of nucleation and crystallization). The epitaxial growth is investigated by varying the laser fluence and the applied number of pulses. The morphology, structure, and epitaxial evolution of films are evaluated by means of atomic force and transmission electron microscopies and X-ray diffraction. Highly epitaxial oriented films of 20-40 nm in thickness are obtained by PLA. The crystallization kinetics of laser treatments is determined to be orders of magnitude faster than thermal treatments with similar activation energies (1.5-4.1 eV), mainly due to the large temperature gradients inducing modified atomic diffusion mechanisms derived mainly from photothermal interactions, as well as a minor contribution of photochemical effects. The fast heating rates achieved by PLA also contribute to the fast epitaxial growth due to reduced coarsening of polycrystalline material. The measurement of the physical properties (electrical resistivity and magnetism) of laser processed CSD films has revealed significantly good functionalities, close to those of thermally grown films, but with much shorter processing times.

We acknowledge financial support from Spanish Ministry of Economy and Competitiveness through the “Severo Ochoa” Programme for Centres of Excellence in R&D (SEV-2013-0295 and SEV-2015- 0496), CONSOLIDER Excellence Network (MAT2015-68994-REDC), COACHSUPENERGY project (MAT2014-51778-C2-1-R, co-financed by the European Regional Development Fund), and the projects MAT2011-28874-C02-01, ENE2014-56109-C3-3-R and Consolider Nanoselect CSD2007-00041, and from the Catalan Government with 2014-SGR-753, 2014-SGR-1638 and Xarmae. AQ and MdlM are also grateful to CSIC and European Social Fund program for JAE-Predoc fellowships (E-08-2012-1321248 and E-08-2013-1028356).

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Country
Spain
Keywords

Photochemical effect, Spin-coated films, Single crystal substrates, Grain-growth, Crystallization kinetics, Photo-thermal interaction, Epitaxial crystallization, Heat-capacity, Optical-properties, Buffer layers, Atmospheric conditions, Fast epitaxial growths, Crystallization process, Yttria-stabilized zirconia, Solution deposition, Pulsed laser annealing, Electrical-properties, Thermal-conductivity

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selected citations
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This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
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popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
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