Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.

NUMANCIA II (Grant No. S-2009/ENE/1477). Research by Eric Garcia-Hemme was partially supported by a PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM). J. Olea and D. Pastor thanks Professor A. Martí and Professor A. Luque for useful discussions and guidance and acknowledge financial support from the MICINN within the program Juan de la Cierva (JCI-2011-10402 and JCI-2011-11471), under which their research was undertaken.

Trabajo presentado a la 9th Spanish Conference on Electron Devices (CDE) celebrada en Valladolid (España) del 12 al 14 de febrero de 2013.-- et al.

S-2009/ENE/1477/NUMANCIA-2.

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