Position sensitivity in semiconductor detectors of ionizing radiation is usually achieved by the segmentation of the sensing diode junction in many small sensing elements read out separately as in the case of conventional microstrips and pixel detectors. Alternatively, position sensitivity can be obtained by splitting the ionization signal collected by one single electrode amongst more than one readout channel with the ratio of the collected charges depending on the position where the signal was primary generated. Following this later approach, we implemented the charge division method in a conventional microstrip detector to obtain position sensitivity along the strip. We manufactured a proof-of-concept demonstrator where the conventional aluminum electrodes were replaced by slightly resistive electrodes made of strongly doped poly-crystalline silicon and being readout at both strip ends. Here, we partially summarize the laser characterization of this first proof-of-concept demonstrator with special emphasis on the study on how the different noise sources are affecting the device position error along the strip. © 2013 Elsevier B.V. © 2013 Elsevier Ltd. All rights reserved.

The research underlying this work has been partly supported by the Spanish Ministry of Economy and Competitiveness, grants FPA2010-22163-C02-01(-02); the European Commission under the FP7 Research Infrastructures project AIDA, grant agreement No. 262025; and by the GICSERV program “Access to ICTS integrated nano and micro electronics cleanroom” of the Spanish Ministry of Science of Innovation.

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