Research on perovskite solar cells is prevalent because of their excellent photovoltaic performance. Most of the perovskite films are prepared by polycrystalline perovskite films and low-temperature solution method, thus inevitably creating a high density of defects, including point defects and extended defects. These defects can also be divided into two types: shallow-level defects and deep-level defects. The multiple types of defects are the main cause of nonradiative recombination, which will limit the enhancement of photovoltaic properties and stability of solar cell devices. In this paper, we review the latest advances in defect passivation and describe in detail the mechanisms of different methods to passivate defects at the surface and interface of perovskite films to reduce nonradiative recombination. We also summarize the research results about the defect passivation to reduce the deep energy level traps by Lewis acid and base, anion and cation, and the results about the conversion of defects into wide band gap materials as well. The effects of various strategies to modulate the mechanism of passivation of perovskite surface/interface defects are also elaborated. In addition, we discuss the intrinsic link between crystal defects and device stability, and provide an outlook on the feasibility of defect passivation strategies in future research.