MEASUREMENT OF THE MASS ATTENUATION COEFFICIENTS FOR SiH4 ANDSi

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 1995Publisher:Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of SciencesJournal:Acta Physica Sinica, volume 44, page 1,853 (issn: 1000-3290, eissn: 1000-3290,

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Authors: null WANG DA-CUN; null LUO PING-AN; null YANG HUA; null WANG ZHI-DONG;

doi: 10.7498/aps.44.1853

MEASUREMENT OF THE MASS ATTENUATION COEFFICIENTS FOR SiH4 ANDSi

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Abstract

With X-rays produced by protons exciting elemental and compound targets the mass attenuation coefficients have been systematicaJly measured for SiH4 in the range of X-ray energy 1.486-15.165keV, for Si in 8.041-29.109keV. Not only the validity of Bragg's additivity law in the gaseous compound was verifed by experiment, but also the mass attenuation coefficients of Si in the energy range 1.4-6 keV were obtained. The photoelectric cross sections have been obtained by subtracting thermal diffuse scattering and Compton scattering cross section from the measured total cross sections and compared with the theoretical results.

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