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AMS Acta
Conference object . 2000
Data sources: AMS Acta
AMS Acta
Other literature type . 2000
Data sources: Datacite
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A L-BAND 50-WATT GaAs Power FET with 58% power added efficiency

Authors: Hayashi, Hisanori; Ui, Norihiko; Saito, Toshiaki; Fukaya, Jun;

A L-BAND 50-WATT GaAs Power FET with 58% power added efficiency

Abstract

High efficiency 50W GaAs power device h s been developed using two high bre kdown voltage G As FET chips that have an AlGaAs/GaAs heterostructure.Circuit designing considerations include the termination of the second-harmonics for improved power added efficiency.The resultant output power at the 3dB g in compression point is 47.0dBm with 58%power added efficiency (PAE)and 15.0 dB linear gain at 1.6GHz. To the uthors ’knowledge,this is the highest efficiency for 50-w tt G As device in the industry.

Country
Italy
Keywords

ING-INF/01 Elettronica

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
0
Average
Average
Average
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