The wide band gap materials, such as silicon carbide (SiC) [1-3] and gallium nitride (GaN) [4-6], are the third generation semiconductor materials, which had been developed after the Silicon (Si) and gallium arsenide (GaAs) materials. Especially, the SiC material is very wellsuited for the high voltage, high power and high temperature applications due to its superi‐ or material properties. Silicon carbide has been known investigated since 1907 after Captain H. J. Round demonstrated yellow and blue emission by application bias between a metal needle and SiC crystal. The potential of using SiC in semiconductor electronics was already recognized about a half of century ago. The most remarkable SiC properties include the wide band gap, very large avalanche breakdown field, high thermal conductivity, high max‐ imum operating temperature and chemical inertness and radiation hardness.