Clean energy resources as an alternative to fossil fuels has been required. Photovoltaics is the most promising among renewable energy technologies. On the other hand, the cost of the electrical energy generated by the solar cells was higher than that generated by fossil fuels. The cost reduction of the solar cell is therefore required. Since high-conversion efficiencies have been demonstrated for solar cells using GaAs substrates in 1977 (Kamath et al., 1977; Woodall et al., 1977), a critical problem is how to reduce power generation cost. The characters required to solar cells strongly depend on its applications. In particular, thin film solar cells are promising for terrestrial applications, because thin film solar cells are more advantageous than bulk type solar cells in terms of consumption of raw materials. Konagai et al. fabricated the thin film solar cells on a single crystalline GaAs substrate by the liquid phase epitaxy mehtod, and focused on the reuse of GaAs substrates by detaching these thin film solar cells from the GaAs substrates (Konagai et al., 1978). Konagai et al. named this separation technique the Peeled Film Technology (PFT). This is the invention of the lift-off method in solar cell development. A specific explanation of the PFT is as follows. An Al1-xGaxAs layer was introduced between the thin film solar cell and the GaAs substrate as a release layer. The thin film solar cell was separated from the GaAs substrate by etching the Al1-xGaxAs layer by the HF solution, because Al1-xGaxAs was readily dissolved by the HF solution compared to GaAs. Since a chemical technique was mainly used for the peeling, this method is defined as a chemical lift-off process. Recently, this has been researched as the epitaxial lift-off (ELO) method (Geelen et al., 1997; Schemer et al., 2000, 2005a; Voncken et al., 2002; Yablonovitch et al., 1987). On the other hand, the cleavage of lateral epitaxial films for transfer (CLEFT) process, where the thin film was mechanically peeled, was developed as a transfer method of a single crystalline GaAs thin film (McClelland et al., 1980). A specific explanation of the CLEFT process is as follows. A photoresist was applied to a surface of a GaAs substrate. The photoresist was patterned with equally-spaced stripe openings by standard photolithographic techniques. Next, a GaAs layer was grown on this patterned substrate surface. In this case, a GaAs layer was grown on only the openings of the photoresist. The lateral growth of a GaAs layer occurs during the GaAs deposition. A single crystalline GaAs layer is therefore formed on the photoresist. Alternative substrate was bonded onto this